WTD4A60S Datasheet | WINSEMI SEMICONDUCTOR

Features - - - - - Repetitive Peak off -State Voltage:600V R.M.S On-State Current(IT(RMS)=4A) Low On-State Voltage (1.6V(Max.)@ITM High mutation dv/dt Sensitive Gate Triggering 4 Mode General Description Sensitive gate triggering Triac is suitable for direct couplingto TTL , CMOS and application such as various logic Functions, low power AC switching applications,such as fanspeed,small light controllers and home appliance equipment. Absolute Maximum Ratings (TJ=25℃ symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM TJ TSTG unless otherwise specified) Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current condition Tc=109℃ One Cycle, 50Hz/60Hz, Ratings 600 4.0 30/33 Units V A A A2s W W A V ℃ ℃ Peak,Non-Repetitive I 2t Peak Gate Power Dissipation Average Gate Power dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature 4.5 1.5 0.1 1.0 7.0 -40~125 -40~150 Thermal Characteristics Symbol RӨJC RӨJA Parameter Thermal Resistance Junction to case(DC) Thermal resistance Junction to Ambient(DC) Value 2.6 100 Units ℃/W ℃/W Rev.A Aug.2010 Copyright@Win Semi Semiconductor Co., Ltd., All right reserved. .Data Sheet.in Electrical Characteristics(Tc=25℃ unless otherwise noted) Symbol IDRM Current VTM I+GT1 III+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c Voltage at mutation IH Holding Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅳ Ⅰ Ⅱ Ⅲ Ⅳ Non-Trigger Gate Voltage Critical Rate of Rise Off-State TJ=125℃,VD=1/2VDRM TJ=125℃,[di/dt]c=-2.0A/ms, VD=2/3VDRM 5 10 V/µs m A Gate Trigger Voltage VD=6V,RL=10Ω 0.2 1.6 1.4 2.0 V Gate Trigger Current VD=6V,RL=10Ω 8 5 12 1.4 1.4 V Items Repetitive Peak Off-State conditions VD=VDRM,Single Phase, Half Wave TJ=125℃ IT=6A,Inst.Measurement Ratin Min - Typ - Max 1.0 1.6 5 5 Unit m A V m...