WTD8A60 Datasheet | WINSEMI SEMICONDUCTOR

Features - - - - Repetitive Peak off -State Voltage:600V R.M.S On-State Current(IT(RMS)=8A) High mutation dv/dt Isolation Voltage (VISO=1500V AC) General Description Sensitive gate triggering Triac is suitable for direct couplingto TTL , CMOS and application such as various logic Functions, low power AC switching applications,such as fanspeed,small light controllers and home appliance equipment. Absolute Maximum Ratings (TJ=25℃ symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM VISO TJ TSTG unless otherwise specified) Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current condition Tc=89℃ One Cycle, 50Hz/60Hz, Ratings 600 8.0 80/88 Units V A A A2s W W A V V ℃ ℃ Peak,Non-Repetitive I 2t Peak Gate Power Dissipation Average Gate Power dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown voltage(R.M.S.) Operating Junction Temperature Storage Temperature A.C 1 minute 32 5.0 0.5 2.0 10 1500 -40~125 -40~150 Thermal Characteristics Symbol RθJc Parameter Thermal Resistance Junction to Case Value Units ℃/W Rev.A Aug.2010 Copyright@Win Semi Semiconductor Co., Ltd., All right reserved. .Data Sheet.in A60 WTD8 D8A60 Electrical Characteristics(Tc=25℃ unless otherwise noted) Symbol IDRM Current VTM I+GT1 IIV+GT1 V-GT1 V-GT3 VGD (dv/dt)c Voltage at mutation IH Holding Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State TJ=125℃,VD=1/2VDRM TJ=125℃,[di/dt]c=-4.0A/ms, VD=2/3VDRM 10 15 V/µs m A Gate Trigger Voltage VD=6V,RL=10Ω Gate Trigger Current VD=6V,RL=10Ω Items Repetitive Peak Off-State conditions VD=VDRM,Single Phase, Half Wave TJ=125℃ IT=12A,Inst.Measurement Ratin Min Typ - Max 2.0 1.4 30 30 30 1.5 1.5 1.5 - Unit m A V m...