WTPB12A60CW Datasheet | WINSEMI SEMICONDUCTOR

Features - Repetitive Peak off-State Voltage: 600V - R.M.S On-State Current(IT(RMS)=12A - Low on-state voltage: VTM=1.55V(Max.)@ IT=17A - High mutation d V/dt. General Description General purpose swithhing and phase control applications. These devices are intended to be interfaced directly to micro-controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings Symbol VDRM/VPRM IT(RMS) ITSM I2t PGM PG(AV) d I/dt IFGM VRGM TJ, Tstg (TJ=25℃ unless otherwise specified) Parameter Peak Repetitive Forward Blocking Voltage(gate open) Forward Current RMS (All Conduction Angles, TJ=58℃) Peak Forward Surge Current, Circuit Fusing Considerations (full Cycle, Sine Wave, 50/60 Hz) (tp= 10 ms) (Note 1) Value 600 12 120/126 100 5 1 50 4 10 -40~125 -40~150 Units V A A A2s W W A/μs A V ℃ ℃ Peak Gate Power - Forward, (TJ = 58°C,Pulse with≤1.0us) Average Gate Power - Forward, (Over any 20ms period) Critical rate of rise of on-state current TJ=125℃ ITM = 20A; IG = 200m A; d IG/dt = 200m A/μs Peak Gate Current - Forward, TJ = 125°C (20 µs, 120 PPS) Peak Gate Voltage - Reverse, TJ= 125°C Junction Temperature Storage Temperature (20 µs, 120 PPS) Note1: .Although not remended, off-state voltages up to 800V may be applied without damage, but the TRIAC may swi TJh to the on-state. The rate of rise of current should not exceed 15A/us. Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Min - Value Typ - Max 1.4 60 Units ℃/W ℃/W Rev. B Nov.2008 Copyright @ Win Semi Semiconductor Co., Ltd., All rights reserved. T03-3 .Data Sheet.in Electrical Characteristics (TJ = 25°C unless otherwise specified) Symbol IDRM//IRRM VTM (VDRM=VRRM,) Forward “On” Voltage (Note2) Characteristics...