WTPB16A60SW Datasheet | WINSEMI SEMICONDUCTOR

Features - Repetitive Peak off-State Voltage: 600V - R.M.S On-State Current(IT(RMS)=16A - Low on-state voltage: VTM=1.55V(Max.)@ IT=22.5A - High mutation d V/dt. General Description General purpose swi TJhing and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) Symbol VDRM /VPRM IT(RMS) ITSM I2t PGM PG(AV) d I/dt IFGM VRGM TJ, Tstg Parameter Peak Repetitive Forward Blocking Voltage(gate open) Forward Current RMS (All Conduction Angles, TJ=58℃) Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz) Circuit Fusing Considerations (tp= 10 ms) Peak Gate Power - Forward, (TJ = 58°C,Pulse with≤1.0us) Average Gate Power - Forward, (Over any 20ms period) Critical rate of rise of on-state current TJ=125℃ ITM = 20A; IG = 200m A; d IG/dt = 200m A/µs Peak Gate Current - Forward, TJ = 125°C (20 µs, 120 PPS) Peak Gate Voltage - Reverse, TJ= 125°C (20 µs, 120 PPS) Junction Temperature Storage Temperature (Note 1) Value 600 16 160/168 144 5 1 50 4 10 -40~125 -40~150 Units V A A A2s W W A/μs A V ℃ ℃ Note1: .Although not remended, off-state voltages up to 800V may be applied without damage, but the TRIAC may swi TJh to the on-state. The rate of rise of current should not exceed 15A/us. Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Min - Value Typ - Max 1.6 60 Units ℃/W ℃/W Rev. B Nov.2008 Copyright @ Win Semi Semiconductor Co., Ltd., All rights reserved. T01-3 .Data Sheet.in Electrical Characteristics (TJ = 25°C unless otherwise specified) Symbol IDRM//IRRM VTM (VDRM=VRRM,) Forward “On” Voltage (Note2) Characteristics Peak Forward or Reverse Blocking Current TJ=25℃ TJ=125℃ (ITM = 22.5A tp=380μs)...