SFY2303AT
SFY2303AT is Silicon P-Channel MOSFET manufactured by WINSEMI.
Description
Silicon P-Channel MOSFET
Features
- -30V, -3.0A
- RDS(ON) =85mΩ (Max.) @ VGS = -10V, ID =-3.0A
- High Power and Current Handing Capability
- Lead Free Product is Acquired
- Surface Mount Package
Application
- PWM Application
- Load Switch
- Power Management
Package
SOT-23 SFY3401AT
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current note1
Power Dissipation
RθJA
Thermal Resistance, Junction to Ambient
TJ, TSTG Operating and Storage Temperature Range
- Drain current limited by maximum junction temperature
TC = 25℃ TC = 100℃
TC = 25℃
Max.
-30 ± 20 -3.0 -2.4 -13 1.1 113 -55 to +150
Units
V V A A A W ℃/W ℃
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
.winsemi. Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
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