SFY2303AT - Silicon P-Channel MOSFET

Description

Silicon P-Channel MOSFET

Features

-30V, -3.0A.
RDS(ON) =85mΩ (Max. ) @ VGS = -10V, ID =-3.0A.
High Power and Current Handing Capability.
Lead Free Product is Acquired.
Surface Mount Package.

WINSEMI

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Datasheet Details

Part number	SFY2303AT
Manufacturer	WINSEMI
File Size	723.11 KB
Description	Silicon P-Channel MOSFET
Datasheet	SFY2303AT Datasheet
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SFY2303AT Product Description Silicon P-Channel MOSFET Features • -30V, -3.0A • RDS(ON) =85mΩ (Max.) @ VGS = -10V, ID =-3.0A • High Power and Current Handing Capability • Lead Free Product is Acquired • Surface Mount Package Application • PWM Application • Load Switch • Power Management Package SOT-23 SFY3401AT Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current note1 PD Power Dissipation RθJA Thermal Resistance, Junction to Ambient TJ, TSTG Operating and Storage Temperature Range *Drain current limited by maximum junction temperature TC = 25℃ TC = 100℃ TC = 25℃ Max. -30 ± 20 -3.0 -2.4 -13 1.

Published: Jan 24, 2025 |