SFY3407AT Datasheet | Winsemi

Description Silicon P-Channel MOSFET Features - -30V, -4.1A - RDS(ON) =60mΩ (Max.) @ VGS = -10V, ID =-4.1A - High Power and Current Handing Capability - Lead Free Product is Acquired - Surface Mount Package Application - PWM Application - Load Switch - Power Management Package SOT-23 SFY3407AT Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current note1 Power Dissipation RθJA Thermal Resistance, Junction to Ambient TJ, TSTG Operating and Storage Temperature Range - Drain current limited by maximum junction temperature TC = 25℃ TC = 100℃ TC = 25℃ Max. -30 ± 20 -4.1 -2.7 -16.4 1.67 75 -55 to +150 Units V V A A A W ℃/W ℃ WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS .winsemi. Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS...