Datasheet4U Logo Datasheet4U.com

SFY3407AT - Silicon P-Channel MOSFET

Description

Silicon P-Channel MOSFET

Features

  • -30V, -4.1A.
  • RDS(ON) =60mΩ (Max. ) @ VGS = -10V, ID =-4.1A.
  • High Power and Current Handing Capability.
  • Lead Free Product is Acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet preview – SFY3407AT

Datasheet Details

Part number SFY3407AT
Manufacturer Winsemi
File Size 768.28 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SFY3407AT Datasheet
Additional preview pages of the SFY3407AT datasheet.

📁 Similar Datasheet

Other Datasheets by Winsemi

Full PDF Text Transcription

Click to expand full text
SFY3407AT Product Description Silicon P-Channel MOSFET Features • -30V, -4.1A • RDS(ON) =60mΩ (Max.) @ VGS = -10V, ID =-4.1A • High Power and Current Handing Capability • Lead Free Product is Acquired • Surface Mount Package Application • PWM Application • Load Switch • Power Management Package SOT-23 SFY3407AT Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current note1 PD Power Dissipation RθJA Thermal Resistance, Junction to Ambient TJ, TSTG Operating and Storage Temperature Range *Drain current limited by maximum junction temperature TC = 25℃ TC = 100℃ TC = 25℃ Max. -30 ± 20 -4.1 -2.7 -16.4 1.
Published: |