AP502 Datasheet | WJ Communication

Features - 2110 - 2170 MHz - 30 d B Gain - +36 d Bm P1d B - -55 d Bc ACLR @ 25 d Bm w CDMA linear power The munications Edge TM Product Information UMTS-band 4W HBT Amplifier Module Product Description The AP502 is a high dynamic range power amplifier in a Ro HS-pliant flange-mount package. The multi-stage amplifier module has 30 d B gain, while being able to achieve high performance for PCS-band applications with +36 d Bm of pressed 1d B power. The module has been internally optimized for driver applications provide -55 d Bc ACLR at 25 for w CDMA applications. The module can be biased down for current when higher efficiency is required. The AP502 uses a high reliability In Ga P/Ga As HBT process technology and does not require any external matching ponents. The module operates off a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. A low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes. All devices are 100% RF and DC tested. The AP502 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. This bination makes the device an excellent candidate for next generation multi-carrier 3G base stations. Functional Diagram - +12 V Single Supply - Power Down Mode - Bias Current Adjustable - Ro HS-pliant flange-mount pkg Top View Pin No. 1 2/4 3/5 6 Case Function RF Output Vcc Vpd RF Input Ground Applications - Final stage amplifiers for repeaters - Optimized for driver amplifier PA mobile infrastructure Specifications 25 ºC, Vcc=12V, Vpd=5V, Icq=820m A, R7=0Ω, 50Ω unmatched fixture Typical Performance (4) Units Min MHz MHz d B d Bc d B d B d Bm d Bm m A m A V V VSWR Parameter Operational Bandwidth Test Frequency Power Gain w CDMA ACLR1 @ 25d Bm (1) w CDMA ACLR2 @ 25d Bm (2) Input Return Loss...