AP503 Datasheet | WJ Communication

Features - 1805 - 1880 MHz - 32.2 d B Gain - +25 d Bm CDMA2k 7fa Power (-64 d Bc ACPR) The munications Edge TM Product Information DCS-band 4W HBT Amplifier Module Product Description The AP503 is a high dynamic range power amplifier in a Ro HS-pliant flange-mount package. The multi-stage amplifier module has 31.5 d B gain. The module has been internally optimized for linearity to provide +25 d Bm (-64 d Bc ACPR) linear power for 7-carrier CDMA2000 applications. The AP503 uses a high reliability In Ga P/Ga As HBT process technology and does not require any external matching ponents. The module operates off of a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. While the module has been tuned for optimal performance for Class AB applications, the quiescent current can also be adjusted for Class B applications through an external resistor. A low-cost metal housing allows the device to have a low thermal resistance and achieves over 100 years MTTF. All devices are 100% RF and DC tested. The AP503 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. This bination makes the device an excellent candidate for next generation multi-carrier 3G base stations using the DCS1800 frequency band. Functional Diagram - +12 V Single Supply - Power Down Mode - Bias Current Adjustable - Ro HS-pliant flange-mount pkg Top View Pin No. 1 2/4 3/5 6 Case Function RF Output Vcc Vpd RF Input Ground Applications - Final stage amplifiers for Repeaters - Optimized for driver amplifier PA mobile infrastructure Specifications (1) 25 ºC, Vcc=12V, Vpd=5V, Icq=835m A, R7=0Ω, 50Ω unmatched fixture Parameter Operational Bandwidth Test Frequency Adjacent Channel Power Ratio Power Gain Input Return Loss Output Return Loss Output P1d B Output IP3...