AP602 Datasheet | WJ Communications

Features - 800 - 2200 MHz - +35.7 d Bm P1d B - -52 d Bc ACLR @ ½W PAVG - -47 d Bc IMD3 @ ½W PEP - 16% Efficiency @ ½W PAVG - - - - Product Description The AP602 is a high dynamic range power amplifier in a lead-free/Ro HS-pliant 5x6mm power DFN SMT package. The single stage amplifier has 13 d B gain, while being able to achieve high performance for 800-2200 MHz applications with up to +35.7 d Bm of pressed 1d B power. Functional Diagram A C L R 1 (d B c) The AP602 uses a high reliability, high voltage In Ga P/Ga As HBT process technology. The device Internal Active Bias incorporates proprietary bias circuitry to pensate for Internal Temp pensation variations in linearity and current draw over temperature. Capable of handling 7:1 VSWR @ The module does not require any negative bias voltage; an internal active bias allows the AP602 to operate directly off 28 Vcc, 2.14 GHz, 3W CW Pout a monly used high voltage supply (typically +24 to +32V). An added feature allows the quiescent bias to be Lead-free/Ro HS-pliant adjusted externally to meet specific system requirements. 5x6 mm power DFN package The AP602 is targeted for use as a pre-driver and driver stage amplifier in wireless infrastructure where high linearity and high efficiency is required. This bination makes the device an excellent candidate for next generation multi-carrier 3G mobile infrastructure. ACLR1 vs. Output Power vs. Vcc WCDMA, Icq = 80 m A, 2140 MHz, 25 ˚C -40 -45 -50 -55 -60 -65 19 26 V 28 V 30 V 32 V Applications - Mobile Infrastructure - Final stage amplifier for repeaters Average Output Power (d Bm) Specifications W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 d B @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 m A Typical Performance W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 d B @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 m A Parameter Operational Bandwidth Test Frequency Output Channel Power Power Gain Input Return Loss Output Return...