DHB020N03
Overview
These N-channel enhanced vdmosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
- Fast switching
- Low on resistance(Rdson≤2.0mΩ)
- Low gate charge(Typ: 65nC)
- Low reverse transfer capacitances(Typ: 435pF)
- 100% single pulse avalanche energy test
- 100% ΔVDS test 2D VDSS = 30V RDS(on) (TYP)= 1.5mΩ 3S ID = 210A
