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DHB020N03 - 210A 30V N-channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

These N-channel enhanced vdmosfets used advanced trench technology design, provided excellent Rdson and low gate charge.

Which accords with the RoHS standard.

Features

  • Fast switching.
  • Low on resistance(Rdson≤2.0mΩ).
  • Low gate charge(Typ: 65nC).
  • Low reverse transfer capacitances(Typ: 435pF).
  • 100% single pulse avalanche energy test.
  • 100% ΔVDS test 2D VDSS = 30V RDS(on) (TYP)= 1.5mΩ 3S ID = 210A 3.

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Datasheet Details

Part number DHB020N03
Manufacturer WXDH
File Size 1.18 MB
Description 210A 30V N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet DHB020N03 Datasheet
Additional preview pages of the DHB020N03 datasheet.

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    Full PDF Text Transcription

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    DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. G 1 2 Features ● Fast switching ● Low on resistance(Rdson≤2.0mΩ) ● Low gate charge(Typ: 65nC) ● Low reverse transfer capacitances(Typ: 435pF) ● 100% single pulse avalanche energy test ● 100% ΔVDS test 2D VDSS = 30V RDS(on) (TYP)= 1.5mΩ 3S ID = 210A 3 Applications ● SPMS applications TO-220C TO-220F TO-262 ● Load switch ● Power management ● BMS System TO-263 4 Electrical Characteristics 4.
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