WeEn Semiconductors BT151S-500R
SCR
| Part No. | BT151S-500R |
|---|---|
| Datasheet | BT151S-500R Download |
| Manufacturer |  WeEn Semiconductors |
| Description | SCR |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High bidirectional blocking voltage capability● High surge current capability
● High thermal cycling performance
● Surface mountable package 3.
APPLICATIONS
● Ignition circuits● Motor control
● Protection circuits
● Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tmb ≤ 103 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tmb ≤ 103 °C; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Static characteristics IGT gate trigger current Dynamic characteristics VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 8 dVD/dt rate of rise of off-state voltage VDM = 335 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform; Fig. 13 Min Typ Max Unit - - 500 V - - 7.5 A - - 12 A - - 120 A -...
