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NXPSC04650X - Silicon Carbide Diode

General Description

Silicon Carbide Schottky diode in a TO220F2L plastic package, designed for high frequency switched-mode power supplies.

2.

Key Features

  • Highly stable switching performance.
  • High forward surge capability IFSM.
  • Extremely fast reverse recovery time.
  • Superior in efficiency to Silicon Diode alternatives.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant.
  • Insulated package rated at 2500V RMS 3.

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Datasheet Details

Part number NXPSC04650X
Manufacturer WeEn
File Size 455.29 KB
Description Silicon Carbide Diode
Datasheet download datasheet NXPSC04650X Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXPSC04650X Silicon Carbide Diode Rev.02 - 07 November 2019 1. General description Silicon Carbide Schottky diode in a TO220F2L plastic package, designed for high frequency switched-mode power supplies. Product data sheet h RoHS alogen-Free 2. Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant • Insulated package rated at 2500V RMS 3. Applications • Power factor correction • Telecom / Server SMPS • UPS • PV inverter • PC Silverbox • LED / OLED TV • Motor Drives 4. Quick reference data Table 1.