WeEn Semiconductors NXPSC04650X
Silicon Carbide Diode
| Part No. | NXPSC04650X |
|---|---|
| Datasheet | NXPSC04650X Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Highly stable switching performance● High forward surge capability IFSM
● Extremely fast reverse recovery time
● Superior in efficiency to Silicon Diode alternatives
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant
● Insulated package rated at 2500V RMS 3.
APPLICATIONS
● Power factor correction● Telecom / Server SMPS
● UPS
● PV inverter
● PC Silverbox
● LED / OLED TV
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Th ≤ 104 °C; Fig. 1; Fig. 2; Fig. 3 Symbol Parameter Conditions Static characteristics VF forward voltage IF = 4 A; Tj = 25 °C; Fig. 5 IF = 4 A; Tj = 150 °C; Fig. 5 Values Unit 650 V 4 A Min Typ Max Unit - 1.5 1.7 V - 1.8 2.1 V WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 K cathode 2 A mb n.c. anode mounting base; isolated Simplified outline NXPSC04650X Silicon Carbide Diode Graphic symbol K A 001aaa020 12 6.
