WeEn Semiconductors WG30N65HA1
This device offers Best-inClass efficiency in hard switching and resonant topology.| Part No. | WG30N65HA1 |
|---|---|
| Datasheet | WG30N65HA1 Download |
| Manufacturer |  WeEn Semiconductors |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Maximum junction temperature 175 °C● Positive Temperature efficient for easy paralleling
● Very soft, fast recovery anti-parallel diode
● High switching speed
● EMI Improved Design 3.
APPLICATIONS
● PFC● Solar converters
● UPS
● Welding Converters
● Mid to high range switching frequency converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCE Collector-emitter voltage, Tj ≥ 25 °C IC Symbol DC collector current, limited by Tj(max) TC = 100 °C Parameter Conditions Static characteristics VCE(sat) Collector-emitter saturation voltage VGE = 15 V; IC = 30 A; Tj = 25 °C Notes Value 650 30 Unit V A Notes Min Typ Max Unit - 1.55 2.1 V WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 G gate 2 C collector 3 E emitter mb C mounting base; connected to collector Simplified outline mb 123 WG30N65HA1 IGBT Graphic symbol C G E sym200 6. Ordering information Table 3. Ordering information Type number Pa...
