WG30N65HFB1 Description
WG30N65HFB1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO263 package to provide extremely low VCE(sat), and excellent switching performance. This device offers Best-inClass efficiency in hard switching and resonant topology.
WG30N65HFB1 Key Features
- Maximum junction temperature 175 °C
- Positive Temperature efficient for easy paralleling
- Very soft, fast recovery anti-parallel diode
- High switching speed
- EMI Improved Design