WG30N65HFB1 - IGBT

Description

WG30N65HFB1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO263 package to provide extremely low VCE(sat), and excellent switching performance.

This device offers Best-inClass efficiency in hard switching and resonant topology.

Features

Maximum junction temperature 175 °C.
Positive Temperature efficient for easy paralleling.
Very soft, fast recovery anti-parallel diode.
High switching speed.
EMI Improved Design 3.

WeEn

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Datasheet Details

Part number	WG30N65HFB1
Manufacturer	WeEn
File Size	893.01 KB
Description	IGBT
Datasheet	WG30N65HFB1 Datasheet
Additional preview pages of the WG30N65HFB1 datasheet.

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Full PDF Text Transcription

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WG30N65HFB1 IGBT Rev.01 - 24 January 2024 Product data sheet 1. General description WG30N65HFB1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO263 package to provide extremely low VCE(sat), and excellent switching performance. This device offers Best-inClass efficiency in hard switching and resonant topology. RoHS halogen-Free 2. Features and benefits • Maximum junction temperature 175 °C • Positive Temperature efficient for easy paralleling • Very soft, fast recovery anti-parallel diode • High switching speed • EMI Improved Design 3. Applications • PFC • Solar converters • UPS • Welding Converters • Mid to high range switching frequency converters 4. Quick reference data Table 1.

Published: Mar 7, 2025 |