WG30N65MFB1 Description
WG30N65MFB1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO263 package to provide extremely low Vce(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology.
WG30N65MFB1 Key Features
- Maximum junction temperature 175 °C
- Positive Temperature efficient for easy paralleling
- Very soft, fast recovery anti-parallel diode
- Smooth & Optimized switching
- EMI Improved Design