WMS30N085E Overview
WMS30N085E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications. h RoHS alogen-Free Lead-Free.
WMS30N085E Key Features
- Advance High Cell Density Trench Technology
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Switching Losses
- Optimized Gate Charge to Minimize Driver Losses
- 100% UIS Tested
- RoHS pliant, Halogen Free and Lead Free