WMS30N085V
Description
WMS30N085V is a high performance logic level N-channel MOSFET in PDFN5X6 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge.
Key Features
- Advance High Cell Density Trench Technology
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Switching Losses
- Optimized Gate Charge to Minimize Driver Losses
- 100% UIS Tested
- RoHS pliant and Halogen Free
Applications
- DC−DC Converters
