WMS30N085V Overview
WMS30N085V is a high performance logic level N-channel MOSFET in PDFN5X6 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.
WMS30N085V Key Features
- Advance High Cell Density Trench Technology
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Switching Losses
- Optimized Gate Charge to Minimize Driver Losses
- 100% UIS Tested
- RoHS pliant and Halogen Free