WMSC020S12B1P Datasheet PDF (N-Channel Silicon Carbide MOSFET)

WMSC020S12B1P - N-Channel Silicon Carbide MOSFET

Description

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Press-fit pin type.

NTC temperature sensor inside.

Features

3-phase full bridge topology.
Press-fit pin configuration.
Low ON resistance.
Low switching losses.
Reduced Qg and Crss.
Minimized circuit impedance.
Robust product design h RoHS alogen-Free Lead-Free 3.

Datasheet Details

Part number	WMSC020S12B1P
Manufacturer	WeEn
File Size	930.63 KB
Description	N-Channel Silicon Carbide MOSFET
Datasheet	WMSC020S12B1P Datasheet

📁 Similar Datasheet

WMS-42PLUS3 - Display User Manual (ETC)

WMS128K8-xxx - 128Kx8 MONOLITHIC SRAM (White Electronic Designs)

WMS256K16-xxx - 256Kx16 MONOLITHIC SRAM (White Electronic Designs)

WMS512K8-xxx - 512Kx8 MONOLITHIC SRAM (White Electronic Designs)

WMS512K8V-xxx - 512Kx8 MONOLITHIC SRAM (WED)

WMS7100 - (WMS7100 / WMS7101) NON-VOLATILE DIGITAL POTENTIOMETERS (Winbond)

WMS7101 - (WMS7100 / WMS7101) NON-VOLATILE DIGITAL POTENTIOMETERS (Winbond)

WMS7140 - (WMS7140 / WMS7141) NONVOLATILE DIGITAL POTENTIOMETERS (Winbond)

WMS7141 - (WMS7140 / WMS7141) NONVOLATILE DIGITAL POTENTIOMETERS (Winbond)

WMS7170 - (WMS7170 / WMS7171) NON-VOLATILE DIGITAL POTENTIOMETERS (Winbond)

Full PDF Text Transcription

Click to expand full text

WMSC020S12B1P N-Channel Silicon Carbide MOSFET Module Rev.02 - 24 September 2024 Product data sheet 1. General description WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Press-fit pin type. NTC temperature sensor inside. 2. Features and benefits • 3-phase full bridge topology • Press-fit pin configuration • Low ON resistance • Low switching losses • Reduced Qg and Crss • Minimized circuit impedance • Robust product design h RoHS alogen-Free Lead-Free 3. Applications • EV chargers • Energy storage and solar energy systems • Power Inverters • AC/DC converters • Power factor correctors • Motor drives 4. Quick reference data Table 1.

Published: Mar 9, 2025 |