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WNSC201200W - Silicon Carbide Diode

Description

Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies.

2.

Features

  • Highly stable switching performance.
  • High forward surge capability IFSM.
  • Extremely fast reverse recovery time.
  • Superior in efficiency to Silicon Diode alternatives.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant.
  • High junction operating temperature capability (Tj(max) = 175 °C) 3.

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Datasheet Details

Part number WNSC201200W
Manufacturer WeEn
File Size 458.58 KB
Description Silicon Carbide Diode
Datasheet download datasheet WNSC201200W Datasheet
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WNSC201200W Silicon Carbide Diode Rev.03 - 12 November 2020 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies. h RoHS alogen-Free 2. Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant • High junction operating temperature capability (Tj(max) = 175 °C) 3. Applications • Power factor correction • Telecom / Server SMPS • UPS • PV inverter • PC Silverbox • LED / OLED TV • Motor Drives 4. Quick reference data Table 1.
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