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WNSC2D301200CW - Silicon Carbide Diode

Description

Dual Silicon Carbide Schottky diode in a TO247-3L plastic package, designed for high frequency switching mode power supplies.

2.

Features

  • Highly stable switching performance.
  • High forward surge capability IFSM.
  • Extremely fast reverse recovery time.
  • Superior in efficiency to Silicon Diode alternatives.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant.
  • High junction operating temperature capability (Tj(max) = 175 °C) 3.

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WNSC2D301200CW Silicon Carbide Diode Rev.03 - 05 September 2024 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a TO247-3L plastic package, designed for high frequency switching mode power supplies. RoHS halogen-Free 2. Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant • High junction operating temperature capability (Tj(max) = 175 °C) 3. Applications • Switching mode power supplies • UPS & energy storage systems • PV inverter and MPPT circuit • Battery formation systems • EV chargers • Motor Drives 4.
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