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WNSC2M12120R Datasheet PDF

WeEn Semiconductors WNSC2M12120R

N-Channel Silicon Carbide MOSFET

Part No. WNSC2M12120R
Datasheet WNSC2M12120R Download
Manufacturer
WeEn Semiconductors
Description N-Channel Silicon Carbide MOSFET
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WNSC2M12120R datasheet page 1 preview

FEATURES AND BENEFITS

Lead-Free
● Separate driver source pin
● Low on-resistance
● Fast switching speed
● 0V turn-off gate voltage for simple gate drive
● 100% UIS Tested
● Easy to parallel
● Controllable dV/dt for optimized EMI
● Reduced cooling requirements
● RoHS compliant 3.

APPLICATIONS

● Switch Mode Power Supplies
● UPS
● Solar string inverter and solar optimizer
● EV Charger
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Symbol Parameter Static characteristics RDS(on) drain-source on-state resistance Dynamic characteristics Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 18 V; Tmb = 25 °C Tmb = 25 °C, Tj = 175 °C Conditions VGS = 15 V; ID = 75 A; Tj = 25 °C Notes Notes Min - QG(tot) total gate charge ID = 75 A; VDS = 800 V; VGS = -4 V/18 V; - QGD gate-drain charge Tj = 25 °C - Source-drain diode Qr recovered charge ISD = 50 A; di/dt =...
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