WeEn Semiconductors WNSC6D16650B
Silicon Carbide Diode
| Part No. | WNSC6D16650B |
|---|---|
| Datasheet | WNSC6D16650B Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● New 6th Generation Technology● Low Forward Voltage Drop
● Low Reverse Leakage Current
● High Forward Surge Capability IFSM
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant h RoHS alogen-Free Lead-Free 3.
APPLICATIONS
● Power factor correction● Telecom / Server SMPS
● UPS
● PV inverter
● PC Silverbox
● LED / OLED TV
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM IF(AV) Tj Symbol repetitive peak reverse voltage average forward current junction temperature δ = 0.5 ; square-wave pulse; Tmb ≤ 139 °C; Fig. 1; Fig. 2; Fig. 3 Parameter Conditions Static characteristics VF forward voltage IF = 16 A; Tj = 25 °C; Fig. 5 IF = 16 A; Tj = 150 °C; Fig. 5 Dynamic characteristics Qr recovered charge IF = 16 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; Fig. 7 Values Unit 650 V 16 A 175 Min Typ °C Max Unit - 1.29 1.45 V - 1.45 1.65 V - 36 - nC WeEn Semiconductors WNSC6D16650B Silicon Carbide Diode 5.
