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WNSC6D20650Y - Silicon Carbide Diode

Description

Silicon Carbide Schottky diode in a IITO2202L plastic package, designed for high frequency, high efficiency systems.

2.

Features

  • New 6th Generation Technology.
  • Low Forward Voltage Drop.
  • Low Reverse Leakage Current.
  • High Forward Surge Capability IFSM.
  • Reduced Losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant.
  • Insulated package rated at 2500V RMS 3.

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Datasheet Details

Part number WNSC6D20650Y
Manufacturer WeEn
File Size 496.81 KB
Description Silicon Carbide Diode
Datasheet download datasheet WNSC6D20650Y Datasheet
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WNSC6D20650Y Silicon Carbide Diode Rev.01 - 06 January 2025 Product data sheet 1. General description Silicon Carbide Schottky diode in a IITO2202L plastic package, designed for high frequency, high efficiency systems. h RoHS alogen-Free 2. Features and benefits • New 6th Generation Technology • Low Forward Voltage Drop • Low Reverse Leakage Current • High Forward Surge Capability IFSM • Reduced Losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant • Insulated package rated at 2500V RMS 3. Applications • PC/Telecom/Server SMPS • UPS & energy storage systems • Battery formation systems • EV chargers • PV inverter and MPPT circuit • Motor Drives 4. Quick reference data Table 1.
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