WNSC6D20650Y Description
Silicon Carbide Schottky diode in a IITO2202L plastic package, designed for high frequency, high efficiency systems.
WNSC6D20650Y Key Features
- New 6th Generation Technology
- Low Forward Voltage Drop
- Low Reverse Leakage Current
- High Forward Surge Capability IFSM
- Reduced Losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS pliant
- Insulated package rated at 2500V RMS