WNSC6D20650Y
Description
Silicon Carbide Schottky diode in a IITO2202L plastic package, designed for high frequency, high efficiency systems.
Key Features
- New 6th Generation Technology
- Low Forward Voltage Drop
- Low Reverse Leakage Current
- High Forward Surge Capability IFSM
- Reduced Losses in associated MOSFET
- Reduced cooling requirements
- Insulated package rated at 2500V RMS
Applications
- PC/Tele/Server SMPS
