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WCMA2008U1B - 256K x 8 Static RAM

Description

The WCMA2008U1B is a high-performance CMOS static RAM organized as 256K words by 8 bits.

Features

  • High Speed.
  • 70ns availability.
  • Voltage range.
  • 2.7V.
  • 3.3V.
  • Ultra low active power.
  • Typical active current: 1 mA @ f = 1MHz.
  • Typical active current: 7 mA @ f = fmax (70ns speed).
  • Low standby power.
  • Easy memory expansion with CE1,CE2 ,and OE features.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power reduces power consumption by 80% when addresses are not toggling. The device.

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Datasheet Details

Part number WCMA2008U1B
Manufacturer Weida Semiconductor
File Size 182.40 KB
Description 256K x 8 Static RAM
Datasheet download datasheet WCMA2008U1B Datasheet
Additional preview pages of the WCMA2008U1B datasheet.

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Full PDF Text Transcription

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WCMA2008U1B WCMA2008U1B 256K x 8 Static RAM Features • High Speed — 70ns availability • Voltage range — 2.7V–3.3V • Ultra low active power — Typical active current: 1 mA @ f = 1MHz — Typical active current: 7 mA @ f = fmax (70ns speed) • Low standby power • Easy memory expansion with CE1,CE2 ,and OE features • Automatic power-down when deselected • CMOS for optimum speed/power reduces power consumption by 80% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected (CE 1 HIGH or CE2 LOW). Writing to the device is accomplished by taking Chip Enable (CE 1) and Write Enable (WE) inputs LOW and Chip Enable 2 (CE 2) HIGH.
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