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WCMA2008U1X - 256K x 8 Static RAM

General Description

The WCMA2008U1X is a high-performance CMOS static RAM organized as 256K words by 8 bits.

Key Features

  • High Speed.
  • 70ns availability.
  • Voltage range.
  • 2.7V.
  • 3.6V.
  • Ultra low active power.
  • Typical active current: 1 mA @ f = 1MHz.
  • Typical active current: 7 mA @ f = fmax (70ns speed) Low standby power Easy memory expansion with CE1,CE2,and OE features Automatic power-down when deselected CMOS for optimum speed/power es power consumption by 80% when addresses are not toggling. The device can be.

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Datasheet Details

Part number WCMA2008U1X
Manufacturer Weida Semiconductor
File Size 317.34 KB
Description 256K x 8 Static RAM
Datasheet download datasheet WCMA2008U1X Datasheet

Full PDF Text Transcription for WCMA2008U1X (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WCMA2008U1X. For precise diagrams, and layout, please refer to the original PDF.

A2008U1X WCMA2008U1X 256K x 8 Static RAM Features • High Speed — 70ns availability • Voltage range — 2.7V–3.6V • Ultra low active power — Typical active current: 1 mA @ f...

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2.7V–3.6V • Ultra low active power — Typical active current: 1 mA @ f = 1MHz • • • • — Typical active current: 7 mA @ f = fmax (70ns speed) Low standby power Easy memory expansion with CE1,CE2,and OE features Automatic power-down when deselected CMOS for optimum speed/power es power consumption by 80% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW). Writing to the device is accomplished by taking Chip Enable (CE1) and Write Enable (WE) inputs LOW and Chip Enable 2 (CE2) HIGH.