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A2008U1X
WCMA2008U1X
256K x 8 Static RAM
Features
• High Speed — 70ns availability • Voltage range — 2.7V–3.6V • Ultra low active power — Typical active current: 1 mA @ f = 1MHz • • • • — Typical active current: 7 mA @ f = fmax (70ns speed) Low standby power Easy memory expansion with CE1,CE2,and OE features Automatic power-down when deselected CMOS for optimum speed/power es power consumption by 80% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW). Writing to the device is accomplished by taking Chip Enable (CE1) and Write Enable (WE) inputs LOW and Chip Enable 2 (CE2) HIGH.