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WCMA2016U4X - 128K x 16 STATIC

Description

of read and write modes.

The WCMA2016U4X is available in a 48-ball FBGA package.

The WCMA2016U4X is a high-performance CMOS static RAMs organized as 128K words by 16 bits.

Features

  • Low Voltage range:.
  • 2.7V-3.3V.
  • Ultra-low active power.
  • Typical active current: 1.5 mA @ f = 1MHz.
  • Typical active current: 7 mA @ f = fmax Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance st.

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Datasheet Details

Part number WCMA2016U4X
Manufacturer Weida Semiconductor
File Size 327.85 KB
Description 128K x 16 STATIC
Datasheet download datasheet WCMA2016U4X Datasheet
Additional preview pages of the WCMA2016U4X datasheet.

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Full PDF Text Transcription

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WCMA2016U4X WCMA2016U4X 128K x 16 Static RAM Features • Low Voltage range: — 2.7V-3.3V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1MHz • • • • — Typical active current: 7 mA @ f = fmax Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW.
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