MUN5115
MUN5111 Series Bias Resistor Transistor PNP Silicon
COLLECTOR 3 BASE 1
R1 R2
3 1 2
2 EMITTER
SOT-323(SC-70)
M aximum R atings ( TA=25 C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Value 50 50 100 Unit Vdc Vdc m Adc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C
Symbol PD
Max 202 (1) 310 (2) 1.6 (1) 2.5 (2) 618 403 -55 to +150
Unit m W m W/ C C/W C
..
Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range
R θJA TJ,Tstg
1.FR-4 @ minimum pad 2.FR-4 @ 1.0 l 1.0 inch Pad l
Device Marking and Resistor Values
Device
MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130
Marking
6A 6B 6C 6D 6E 6F 6G
R1(K)
10 22 47 10 10 4.7 1.0
R2(K)
10 22 47 47 8 8
Device
MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5136 MUN5137
Marking
6H 6J 6K 6L 6M 6N 6P
R1(K)
2.2 4.7 4.7 22 2.2 100 47
R2(K)
2.2 4.7 47 47 47 100...
