WT6401 Overview
WT6401 P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CURRENT -4.3 AMPERS DRAIN SOUCE VOLTAGE -12 VOLTAGE.
WT6401 Key Features
- Super High Dense Cell Design For Low RDS(ON) RDS(ON)<50mΩ@VGS=10V -Rugged and Reliable -Simple Drive Requirement -Fast S
WT6401 Applications
- Power Management in Notebook puter -Portable Equipment -Battery Powered System