Weitron Technology WT6401
P-Channel Enhancement Mode Power MOSFET
| Part No. | WT6401 |
|---|---|
| Datasheet | WT6401 Download |
| Manufacturer |  Weitron Technology |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
FEATURES
: *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<50mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *Fast Switching *1.8V Gate Rated *SOT-23 Package 3 1 2 SOT-23APPLICATIONS
*Power Management in Notebook Computer *Portable Equipment *Battery Powered SystemMAXIMUM RATINGS
(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@10V(TA ,VGS@10V(TA Pulsed Drain Current1 Total Power Dissipation(TA=25 ℃ ) Maximum Junction-ambient3 Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD R JA Value Unit V ± 3 A 1.38 90 -55~+150 W ℃/W ℃ TJ, Tstg Device Marking WT6401=6401 http: WEITRON 1/6 06-May-05 WT6401ELECTRICAL CHARACTERISTICS
(TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=-250μA Gate-Source Threshold Voltage VDS=VGS,ID=-250μA Gate-Source Leakage Current VGS= ±8V Drain-Source Leakage Current(Tj=25℃) VDS=-16V,VGS =...
