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WT6401
P-Channel Enhancement Mode Power MOSFET
1 GATE
SOURCE
3 DRAIN
DRAIN CURRENT -4.3 AMPERS DRAIN SOUCE VOLTAGE -12 VOLTAGE
2
Features:
*Super High Dense Cell Design For Low RDS(ON) RDS(ON)<50mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *Fast Switching *1.8V Gate Rated *SOT-23 Package
3 1 2
SOT-23
Applications
*Power Management in Notebook Computer *Portable Equipment *Battery Powered System
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Maximum Ratings(T =25�C Unless Otherwise Specified)
A
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@10V(TA ,VGS@10V(TA Pulsed Drain Current1 Total Power Dissipation(TA=25 ℃ ) Maximum Junction-ambient3 Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM PD R
JA
Value
Unit
V
±
3
A
1.
WT6401 Datasheet
