Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
1 GATE
SOURCE
3 DRAIN
DRAIN CURRENT -4.3 AMPERS DRAIN SOUCE VOLTAGE -12 VOLTAGE
Features
:
- Super High Dense Cell Design For Low RDS(ON) RDS(ON)<50mΩ@VGS=10V
- Rugged and Reliable
- Simple Drive Requirement
- Fast Switching
- 1.8V Gate Rated
- SOT-23 Package
3 1 2
SOT-23
Applications
- Power Management in Notebook puter
- Portable Equipment
- Battery Powered System
..
Maximum Ratings(T =25- C Unless Otherwise Specified)
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@10V(TA ,VGS@10V(TA Pulsed Drain Current1 Total Power Dissipation(TA=25 ℃ ) Maximum Junction-ambient3 Operating Junction and...