Datasheet Summary
Surface Mount N-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
D1
1 3 8
DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 40 VOLTAGE
S1 G1
D1
D2
S2
Features
:
- Super high dense cell design for low RDS(ON) RDS(ON)<35mΩ@VGS = 10V RDS(ON)<62mΩ@VGS = 4.5V
- Simple Drive Requirement
- Dual N MOSFET Package
- SO-8 Package
D2
Maximum Ratings (TA=25 C Unless Otherwise Specified)
..
G2
SO-8
Rating
Symbol VDS VGS
(TA =70 C)
Value 40
Unite V V A A A W C/W C
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) (TA =25 C)
+ 20 5 4.2 20 1.7 2 1.44 62.5 -55 to 150
ID IDM IS PD R θ JA TJ, Tstg
Pulsed Drain Current (2) Drain-Source...