Datasheet Summary
Surface Mount N-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
1 3
DRAIN CURRENT 14 AMPERES DRAIN SOURCE VOLTAGE 25 VOLTAGE
8 7
Features
:
- Super high dense cell design for low RDS(ON) R DS(ON) <7 mΩ@VGS=10V R DS(ON) <9 mΩ@VGS=4.5V
- Rugged and Reliable
- SO-8 Package
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient (1) Operating Junction and Storage Temperature Range Symbol VSpike4 VDS VGS ID IDM IS PD R θJA TJ, Tstg...