Weitron Technology WTC2302
N-Channel Enhancement Mode Power MOSFET
| Part No. | WTC2302 |
|---|---|
| Datasheet | WTC2302 Download |
| Manufacturer |  Weitron Technology |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
FEATURES
: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 2 SOURCE 3 1 2 SOT-23MAXIMUM RATINGS
(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1, 2 Total Power Dissipation (TA =25°C ) Maximum Junction-ambient 3 (T A Unless Otherwise Specified) Symbol V DS VG S ID IDM PD R θJA T J , T s tg Value 20 ±8 2.3 8 0.9 145 -55~+150 Unit V A A W °C /W °C Operating Junction and Storage Temperature Range Device Marking WTC2302 = N02 WEITRON 1/6 Rev.B 24-Aug-09 WTC2302ELECTRICAL CHARACTERISTICS
(TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=-10μA Gate-Source Threshold Voltage VDS=VGS,ID=250μA Gate-Source Leakage Current VGS= ±8V Drain-Source Leakage Current(Tj=25℃) VDS=9.6V,VGS=0 Drain-Source On-Resistance VGS=4.5V,ID=2.8A VGS=2.5V,ID=2.0A Forward Transconductance VDS=5V,ID=4.0A gfs R...
