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WTC2302
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 2.3 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
2
SOURCE
3 1 2
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1, 2 Total Power Dissipation (TA =25°C ) Maximum Junction-ambient 3 (T A
Unless Otherwise Specified) Symbol
V DS VG S ID IDM PD R θJA T J , T s tg
Value
20 ±8 2.3 8 0.9 145 -55~+150
Unit
V A A W °C /W °C
Operating Junction and Storage Temperature Range
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Device Marking
WTC2302 = N02
WEITRON
http://www.weitron.com.tw
1/6
Rev.
WTC2302 Datasheet
