Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT 3 AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE
..
Features
:
SOURCE
3 1 2
- Super High Dense Cell Design For Low R DS(ON) R DS(ON) <160 mΩ@V GS =10V
- Rugged and Reliable
- Simple Drive Requirement
- SOT-23 Package
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
Unless Otherwise Specified) Symbol
VDS VGS
Value
60 ±20 3.0 2.3 10 1.38 90 -55~+150
Unit
,(T A ,(T A
ID IDM PD R
Pulsed Drain Current
1,2
Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature...