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WTC2308 - Enhancement Mode Power MOSFET

Features

  • SOURCE 2 3 1 2.
  • Super High Dense Cell Design For Low R DS(ON) R DS(ON).

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Datasheet Details

Part number WTC2308
Manufacturer Weitron Technology
File Size 976.15 KB
Description Enhancement Mode Power MOSFET
Datasheet download datasheet WTC2308 Datasheet

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Full PDF Text Transcription

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WTC2308 N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 3 AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE www.DataSheet4U.com Features: SOURCE 2 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <160 mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Unless Otherwise Specified) Symbol VDS VGS Value 60 ±20 3.0 2.3 10 1.38 90 -55~+150 Unit V ,(T A ,(T A ID IDM PD R JA A Pulsed Drain Current 1,2 Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range W ℃/W ℃ TJ, Tstg Device Marking WTC2308=2308 http:www.weitron.com.
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