WTC2308 Overview
WTC2308 N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 3 AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE.
WTC2308 Key Features
- Super High Dense Cell Design For Low R DS(ON) R DS(ON) <160 mΩ@V GS =10V -Rugged and Reliable -Simple Drive Requirement
- V ns nC