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WTC2301
P-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT -2.3 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ @V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
2
SOURCE
3 1 2
SOT-23
Applications
*Power Management in Notebook Computer *Portable Equipment *Battery Powered System
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current
1,2
Unless Otherwise Specified) Symbol
VDS VGS ID I DM PD R θ JA R θJC Ta Tc TJ T stg
Value
-20 ±8 -2.3 -8 0.9 0.
WTC2301 Datasheet
