Weitron Technology WTC2301
Enhancement Mode Power MOSFET
FEATURES
: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ @V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 2 SOURCE 3 1 2 SOT-23APPLICATIONS
*Power Management in Notebook Computer *Portable Equipment *Battery Powered SystemMAXIMUM RATINGS
(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R θ JA R θJC Ta Tc TJ T stg Value -20 ±8 -2.3 -8 0.9 0.57 140 100 150 150 150 -55~+150 Unit V A A W ˚C /W ˚C /W ˚C ˚C ˚C ˚C Total Po wer Dis sipation(T A =25˚C) (T A =75˚C) Maximum Junction-ambient 3 Maximum Junction-case Ambient Temperature Case Temperature Operating Junction Temperature Range Storage Temperature Range Device Marking WTC2301 = 01 WEITRON 1/6 Rev.D 29-Mar-10 WTC2301ELECTRICAL CHARACTERISTICS
(TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250μA Gate-Source T...