WTC2301 Description
WTC2301 P-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT -2.3 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE.
WTC2301 Key Features
- Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ @V GS =-4.5V -Rugged and Reliable -Simple Drive Requiremen
WTC2301 Applications
- Power Management in Notebook puter -Portable Equipment -Battery Powered System