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WTC2304 - Enhancement Mode Power MOSFET

Key Features

  • 2 SOURCE 3 1 2.
  • Super High Dense Cell Design For Low RDS(ON) RDS(ON).

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Datasheet Details

Part number WTC2304
Manufacturer Weitron Technology
File Size 771.22 KB
Description Enhancement Mode Power MOSFET
Datasheet download datasheet WTC2304 Datasheet

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Other Datasheets by Weitron Technology

Part Number Description
WTC2301 Enhancement Mode Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WTC2304 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 2.7 AMPERS DRAIN SOUCE VOLTAGE 25 VOLTAGE www.DataSheet4U.com Features: 2 SOURCE 3 1 2 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V *Rugged and Reliable Application: *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@4.5V(TA ,VGS@4.5V(TA Pulsed Drain Current1,2 Total Power Dissipation(TA=25 ℃ ) Maximum Junction-ambient3 Unless Otherwise Specified) Symbol VDS VGS ID IDM PD R JA Value 20 ±12 3.2 2.6 10 1.38 90 -55~+150 Unit V A W ℃/W ℃ Operating Junction and Storage Temperature Range TJ, Tstg Device Marking WTC2302=2302 http:www.