Weitron Technology WTC2304
Enhancement Mode Power MOSFET
| Part No. | WTC2304 |
|---|---|
| Datasheet | WTC2304 Download |
| Manufacturer |  Weitron Technology |
| Description | Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
FEATURES
: 2 SOURCE 3 1 2 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V *Rugged and Reliable Application: *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-23 Package SOT-23MAXIMUM RATINGS
(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@4.5V(TA ,VGS@4.5V(TA Pulsed Drain Current1,2 Total Power Dissipation(TA=25 ℃ ) Maximum Junction-ambient3 Unless Otherwise Specified) Symbol VDS VGS ID IDM PD R JA Value 20 ±12 3.2 2.6 10 1.38 90 -55~+150 Unit V A W ℃/W ℃ Operating Junction and Storage Temperature Range TJ, Tstg Device Marking WTC2302=2302 http: WEITRON 1/6 09-May-05 WTC2302ELECTRICAL CHARACTERISTICS
(TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=250μA Gate-Source Threshold Voltage VDS=VGS,ID=250μA Gate-Source Leakage Current VGS= ±12V Drain-Source Leakage Current(Tj=25℃) VDS=20V,VGS=0 Drain-Source Leakage Current(Tj=70℃) VDS=20V,VGS=0 Drain-Source On-Resistance VGS=4.5V,ID=3.6A VGS=2.5V,ID=3.1A Forward Transconductance VDS=5V,ID=3.6A gfs RDS(on) 6 85 115 mΩ IDSS 10 V(BR)DSS VGS(Th) IGSS 20 0.
