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WTC2309
P-Channel Enhancement Mode Power MOSFET
1 GATE
SOURCE
3 DRAIN
DRAIN CURRENT -3.7 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
2
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Features:
3 1 2
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <75m Ω@V GS =-10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(TA=25˚C) ,(TA=70˚C) Pulsed Drain Current
1,2
Unless Otherwise Specified) Symbol
VDS VGS ID I DM PD R θJA TJ , Tstg
Value
-30 ±20 -3.7 -3.0 -12 1.38 90 -55~+150
Unit
V
A
Total Power Dissipation(TA=25˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range
W ˚C/W ˚C
Device Marking
WTC2309=2309
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WTC2309 Datasheet
