Weitron Technology WTC2306
Enhancement Mode Power MOSFET
FEATURES
: * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package 3 1 2APPLICATIONS
: * Power Management in Notebook Computer * Portable Equipment * Battery Powered System SOT-23MAXIMUM RATINGS
(TA Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation (TA=25°C) Maximum Junction-Ambient2 Operating Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ Tstg Value 30 ±12 5.8 30 1.4 140 -55~+150 -55~+150 Unit V V A A W °C/W °C °C Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Device Marking WTC2306 = N06 WEITRON 1/4 Rev.B 17-Aug-09 WTC2306ELECTRICAL CHARACTERISTICS
(TA=25°C Unless Otherwise Specified) Characteristic Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0V, ID=250...