Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE
SOURCE
Features
:
- Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V
- Rugged and Reliable
- Simple Drive Requirement
- SOT-23 Package
3 1 2
Applications:
- Power Management in Notebook puter
- Portable Equipment
- Battery Powered System
SOT-23
Maximum Ratings (TA
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation (TA=25°C) Maximum Junction-Ambient2 Operating Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ Tstg Value...