Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE
..
Features
:
SOURCE
3 1 2
- Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V
- Rugged and Reliable
- Simple Drive Requirement
- SOT-23 Package
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Con tinuous Drain Current 3 ,V GS @4.5V(T A ,V GS @4.5V(T A Pulsed Drain Current
1,2
Unless Otherwise Specified) Symbol
VDS VGS ID IDM PD R θJA TJ , Tstg
Value
30 ± 12 5 4 20 1.38 90
- 55~+150
Unit
Total Power Dissipation(T A =25 ˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and...