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WTC2306A - Enhancement Mode Power MOSFET

Key Features

  • SOURCE 2 3 1 2.
  • Super High Dense Cell Design For Low R DS(ON) R DS(ON).

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Datasheet Details

Part number WTC2306A
Manufacturer Weitron Technology
File Size 735.88 KB
Description Enhancement Mode Power MOSFET
Datasheet download datasheet WTC2306A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WTC2306A N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE www.DataSheet4U.com Features: SOURCE 2 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Con tinuous Drain Current 3 ,V GS @4.5V(T A ,V GS @4.5V(T A Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID IDM PD R θJA TJ , Tstg Value 30 ± 12 5 4 20 1.38 90 - 55~+150 Unit V A Total Power Dissipation(T A =25 ˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range W ˚C/W ˚C Device Marking WTC2306A=2306A http:www.weitron.com.