Weitron KTC4375
NPN EPITAXIAL PLANAR TRANSISTOR
| Part No. | KTC4375 |
|---|---|
| Datasheet | KTC4375 Download |
| Manufacturer |  Weitron |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 30 30 5 1.5 0.5 150 -55 to 150 Unit V V V A W ˚C ˚C WEITRON 1/3 04-Feb-09 Free Datasheet KTC4375ELECTRICAL CHARACTERISTICS
Characteristics Collector-Base Breakdown Voltage IC=1mA,IE=0 Collector-Emitter Breakdown Voltage IC=10mA,IB=0 Emitter-Base Breakdown Voltage IC=0,IE=1mA IE=0,VCB=30V IC=0,VEB=5V Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 30 30 5 Typ Max 0.1 0.1 Unit V V V µA µA ON CHARACTERISTICS DC Current Gain IC=0.5A,VCE=2V Collector-Emitter Saturation Voltage IC=1.5A, IB =30mA Collector-Emitter Saturation Voltage IC=0.5A, VCE =2V hFE(1) VCE(sat) VBE(sat) 100 320 2 1 V V DYNAMIC CHARACTERISTICS Transition Frequency IC=0.5A,VCE=2V Collector Output Capacitance IE=0,VCB=10V,f=1MHz fT Cob 120 40 MHz pF CLASSIFICATION OF hFE(1) Rank Range Marking...
