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WED3EG6418S-D4 - 128MB- 16Mx64 DDR SDRAM UNBUFFERED

General Description

The WED3DG6418S is a 16Mx64 Double Data Rate SDRAM memory module based on 128Mb DDR SDRAM component.

The module consists of eight 16Mx8 DDR SDRAMs in 66 pin TSOP package mounted on a 200 Pin FR4 substrate.

White Electronic Designs Corp.

Key Features

  • Double-data-rate architecture Speed of 100MHz, 133MHz and 166MHz Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2,5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input Auto and self refresh Serial presence detect JEDEC standard 200 pin SO-DIMM package Power Supply: 2.5V ± 0.25V Synchronous design allows precise cycle control with the use of system clock.

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Datasheet Details

Part number WED3EG6418S-D4
Manufacturer White Electronic Designs
File Size 115.94 KB
Description 128MB- 16Mx64 DDR SDRAM UNBUFFERED
Datasheet download datasheet WED3EG6418S-D4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.datasheet4u.com WED3EG6418S-D4 FINAL 128MB- 16Mx64 DDR SDRAM UNBUFFERED W/PLL FEATURES Double-data-rate architecture Speed of 100MHz, 133MHz and 166MHz Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2,5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input Auto and self refresh Serial presence detect JEDEC standard 200 pin SO-DIMM package Power Supply: 2.5V ± 0.25V Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lenths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.