WV3EG216M64STSU-D4 - 256MB - 2x16Mx64 DDR SDRAM UNBUFFERED

Description

The WV3EG216M64STSU is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components.

The module consists of eight 16Mx16 DDR SDRAMs in 66 pin TSOP package mounted on a 200 Pin FR4 substrate.

Synchronous design allows precise cycle control with the use of system clock.

Features

Double-data-rate architecture PC2700@CL=2.5 Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2,5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input Auto and self refresh, (8K/64ms refresh) Serial presence detect with EEPROM Power Supply: VCC/VCCQ: 2.5V ± 0.20V Dual Rank Standard 200 pin SO-DIMM package.
Package height options: D4: 31.75mm (1.25").

White Electronic Designs

📥 Download Datasheet

Datasheet Details

Part number	WV3EG216M64STSU-D4
Manufacturer	White Electronic Designs
File Size	302.28 KB
Description	256MB - 2x16Mx64 DDR SDRAM UNBUFFERED
Datasheet	WV3EG216M64STSU-D4 Datasheet
Additional preview pages of the WV3EG216M64STSU-D4 datasheet.

📁 Similar Datasheet

Other Datasheets by White Electronic Designs

WV3EG232M64EFSU-D4 - 512MB - 2x32Mx64 DDR SDRAM
WV3EG232M64STSU-D4 - 512MB - 2x32Mx64 DDR SDRAM UNBUFFERED
WV3EG264M64EFSU-D4 - 1GB - 2x64Mx64 DDR SDRAM UNBUFFERED
WV3EG264M72ESFR-D4 - 1GB - 2x64Mx72 DDR SDRAM REGISTERED
WV3EG265M64EFSU-D4 - 1GB- 2x64Mx64 DDR SDRAM UNBUFFERED
WV3EG265M72EFSU-D4 - 1GB - 2x64Mx72 DDR SDRAM
WV3EG128M72EFSR-D3 - 1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL
WV3EG32M64ETSU-D3 - 256MB - 32Mx64 DDR SDRAM UNBUFFERED

Full PDF Text Transcription

Click to expand full text

White Electronic Designs WV3EG216M64STSU-D4 PRELIMINARY* 256MB – 2x16Mx64 DDR SDRAM UNBUFFERED FEATURES Double-data-rate architecture PC2700@CL=2.5 Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2,5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input Auto and self refresh, (8K/64ms refresh) Serial presence detect with EEPROM Power Supply: VCC/VCCQ: 2.5V ± 0.20V Dual Rank Standard 200 pin SO-DIMM package • Package height options: D4: 31.75mm (1.

Published: Oct 13, 2009 |