WV3EG64M64ETSU-D3 Datasheet | White Electronic Designs

FEATURES Double-data-rate architecture PC2700 @ CL 2.5 Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2.5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input. Auto and self refresh, (8K/64ms refresh) Serial presence detect with EEPROM Power supply: - VCC = VCCQ = +2.5V ±0.2V 184 pin DIMM package - D3 PCB height: 28.58mm (1.125") NOTE: Consult factory for availability of: - Ro HS pliant products - Vendor source control options - Industrial temperature option - This product is under development, is not qualified or characterized and is subject to change without notice. DESCRIPTION The WV3EG64M64ETSU is a 64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM ponents. The module consists of eight 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184 pin substrate. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. .. OPERATING FREQUENCIES DDR333 @CL=2.5 Clock Speed CL-t RCD-t RP 166MHz 2.5-3-3 August 2005 Rev. 1 White Electronic Designs Corporation - (602) 437-1520 - .wedc. White Electronic Designs PRELIMINARY PIN CONFIGURATION PIN SYMBOL PIN SYMBOL 47 NC 1 VREF 2 DQ0 48 A0 3 VSS 49 NC 4 DQ1 50 VSS 5 DQS0 51 NC 6 DQ2 52 BA1 7 VCC 53 DQ32 8 DQ3 54 VCCQ 9 NC 55 DQ33 10 NC 56 DQS4 11 VSS 57 DQ34 12 DQ8 58 VSS 13 DQ9 59 BA0 14 DQS1 60 DQ35 15 VCCQ 61 DQ40 16 CK1 62 VCCQ 17 CK1# 63 WE# 18 VSS 64 DQ41 19 DQ10 65 CAS# 20 DQ11 66 VSS 21 CKE0 67 DQS5 22 VCCQ 68 DQ42 23 DQ16 69 DQ43 24 DQ17 70 VCC 25 DQS2 71 NC 26 VSS 72 DQ48 27 A9 73 DQ49 28 DQ18 74 VSS .. 29 A7 75 CK2# 30 VCCQ 76 CK2 31 DQ19 77 VCCQ 32 A5 78 DQS6 33 DQ24 79 DQ50 80 DQ51 34 VSS 35 DQ25 81 VSS 36 DQS3 82 VCCID 37 A4 83 DQ56...