WNM4001
Description
The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in small signal switch.
Key Features
- Supper high density cell design for extremely low Rds(on)
- Exceptional ON resistance and maximum DC current capability
- Small package design with SOT-523 WNM4001 Http://.willsemi. Top D 3 12 GS SOT-523 D 3 12 GS
