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WNM4006 - N-Channel MOSFET

Description

The WNM4006 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 WNM4006 Http//:www. willsemi. com SOT-23 D 3 12 GS Pin configuration (Top view) W46.
  • W46.
  • = Device Code = Month (A~Z).

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Datasheet Details

Part number WNM4006
Manufacturer Will Semiconductor
File Size 124.69 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM4006 Datasheet
Additional preview pages of the WNM4006 datasheet.

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Full PDF Text Transcription

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WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) 45 Rds(on) (ȍ) 0.126@ VGS=10V 0.142@ VGS=4.5V 0.147@ VGS=4.0V 0.208@ VGS=2.5V Descriptions The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM4006 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 WNM4006 Http//:www.willsemi.com SOT-23 D 3 12 GS Pin configuration (Top view) W46* W46 * = Device Code = Month (A~Z) Applications z Driver for Relay, Solenoid, Motor, LED etc.
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