WNM4006
Description
The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
Key Features
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package SOT-23 WNM4006 Http//:.willsemi. SOT-23 D 3 12 GS W46* W46 * = Device Code = Month (A~Z)
