WCR650N60T - MOSFET

WillSEMI

Key Features

The WCR600N60T series is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on resistance and lower gate.
650V@TJ=150°C.
Typ. RDS(on)=0.57Ω.
Low gate charge(typ. Qg= 9.6nC) charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching.
100% avalanche tested.
100% Rg tested performance, and withstand extreme dv/dt rate and higher avalanche ene.

WCR650N60T mosfet by WillSEMI - Datasheet Preview

Datasheet Details

Part number	WCR650N60T
Manufacturer	WillSEMI
File Size	886.63 KB
Description	MOSFET
Datasheet	WCR650N60T Datasheet

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Other Datasheets by WillSEMI

Part Number	Description
WCR650N60TF	MOSFET
WCR650N60TG	MOSFET
WCR650N60TN	MOSFET
WCR380N65T	MOSFET
WCR380N65TF	MOSFET

Full PDF Text Transcription (Reference)

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WCR650N60T Series WCR650N60T/ WCR650N60TF/ WCR650N60TG/ WCR650N60TN 600V N-Channel Super Junction MOSFET Description Features The WCR600N60T series is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on resistance and lower gate  650V@TJ=150°C  Typ.RDS(on)=0.57Ω  Low gate charge(typ. Qg= 9.6nC) charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching  100% avalanche tested  100% Rg tested performance, and withstand extreme dv/dt rate and higher avalanche energy. This device is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.