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WCR650N60TG - MOSFET

Download the WCR650N60TG datasheet PDF. This datasheet also covers the WCR650N60T variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • The WCR600N60T series is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on resistance and lower gate.
  • 650V@TJ=150°C.
  • Typ. RDS(on)=0.57Ω.
  • Low gate charge(typ. Qg= 9.6nC) charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching.
  • 100% avalanche tested.
  • 100% Rg tested performance, and withstand extreme dv/dt rate and higher avalanche ene.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (WCR650N60T-WillSEMI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number WCR650N60TG
Manufacturer WillSEMI
File Size 886.63 KB
Description MOSFET
Datasheet download datasheet WCR650N60TG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WCR650N60T Series WCR650N60T/ WCR650N60TF/ WCR650N60TG/ WCR650N60TN 600V N-Channel Super Junction MOSFET Description Features The WCR600N60T series is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on resistance and lower gate  650V@TJ=150°C  Typ.RDS(on)=0.57Ω  Low gate charge(typ. Qg= 9.6nC) charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching  100% avalanche tested  100% Rg tested performance, and withstand extreme dv/dt rate and higher avalanche energy. This device is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.