WNM01N10 - MOSFET

WillSEMI

General Description

The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

Trench Technology.
Supper high density cell design.
Excellent ON resistance for higher DC current.
Small package SOT-23.

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WNM01N10 mosfet by WillSEMI - Datasheet Preview

Datasheet Details

Part number	WNM01N10
Manufacturer	WillSEMI
File Size	0.96 MB
Description	MOSFET
Datasheet	WNM01N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM01N10 Single N-Channel, 100V, 1.7A, Power MOSFET VDS (V) 100 Typical Rds(on) (Ω) 0.235@ VGS=10V 0.255@ VGS=4.5V Descriptions The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM01N10 is Pb-free and Halogen-free. WNM01N10 Http://www.sh-willsemi.com D S G SOT-23 D 3 12 GS Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Small package SOT-23 Applications  Driver for Relay, Solenoid, Motor, LED etc.