WNM01N11 Overview
Descriptions The WNM01N11 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit.
WNM01N11 Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Small package SOT-23-6L
WNM01N11 Applications
- Driver for Relay, Solenoid, Motor, LED etc