WNM01N11 - MOSFET

WillSEMI

General Description

The WNM01N11 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

Trench Technology.
Supper high density cell design.
Excellent ON resistance for higher DC current.
Small package SOT-23-6L.

📥 Download Datasheet

WNM01N11 mosfet by WillSEMI - Datasheet Preview

Datasheet Details

Part number	WNM01N11
Manufacturer	WillSEMI
File Size	1.18 MB
Description	MOSFET
Datasheet	WNM01N11 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
WNM07N60	N-Channel MOSFET	Will Semiconductor
WNM07N60F	N-Channel MOSFET	Will Semiconductor
WNM07N65	N-Channel MOSFET	Will Semiconductor
WNM07N65F	N-Channel MOSFET	Will Semiconductor
WNM12N65	N-Channel MOSFET	Will Semiconductor

Other Datasheets by WillSEMI

Part Number	Description
WNM01N10	MOSFET
WNM03301D	Single N-Channel 30V 36A Power MOSFET
WNM05N60	MOSFET
WNM05N60F	MOSFET
WNM2046B	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

WNM01N11 Single N-Channel, 110V, 1.8A, Power MOSFET VDS (V) 110 Typical Rds(on) (Ω) 0.230@ VGS=10V 0.250@ VGS=4.5V WNM01N11 Http://www.sh-willsemi.com Descriptions The WNM01N11 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM01N11 is Pb-free and Halogen-free. SOT-23-6L DDS 65 4 123 DDG Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Small package SOT-23-6L Applications  Driver for Relay, Solenoid, Motor, LED etc.