WNM2072
Description
Typical Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.315@ VGS=1.8V Http://.sh-willsemi. G S D DFN1006-3L The WNM2072 is N-Channel enhancement MOS Field Effect Transistor.
Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package DFN1006-3L
